Motion of muonium (hydrogen) in the III-V nitrides

Lichti R., ÇELEBİ Y. G., Cox S., Davis E.

27th International Conference on the Physics of Semiconductors (ICPS-27), Arizona, United States Of America, 26 - 30 July 2004, vol.772, pp.255-256 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 772
  • Doi Number: 10.1063/1.1994089
  • City: Arizona
  • Country: United States Of America
  • Page Numbers: pp.255-256
  • Istanbul University Affiliated: Yes

Abstract

Muon spin relaxation measurements in the III-V nitrides have provided data on the motion of each of the three charge-states of the muonium 'isotope' of hydrogen. Motional parameters are established for Mu(+) in InN, Mu(0) in AlN, and Mu(-) in GaN, with qualitative results in the other materials. Both Mu(+) and Mu(0) show tunneling below 300 K and thermal diffusion at higher temperatures leading to interactions with other impurities or extended defects.