A novel current controlled multiband fully differential CMOS low noise amplifier (LNA) is presented in this work. For demonstration purposes, a CMOS structure with a concurrent multiband matching network and a local active feedback, that enhances the linearity, has been designed for cellular applications 3G-4G in which the out-of-band IIP3 and IIP2 specifications are stringent. The LNA achieves 1.44dB and 1.22dB noise figures in the WCDMA bands I-II-V. S11 is below -10 dB from 850 MHz to 910 MHz and it is below -10 dB from 1.93 GHz to 2.37 GHz. IIP3 is -0.409 dBm for band-V and 5.87 dBm for the WCDMA band-I and 4G band-I. The total current consumption is 10.55 mA from a supply voltage of 2V. The design of the LNA has been carried out in TSMC 65nm RF CMOS process technology.