Characterization of a GaAs/GaAsBi pin solar cell


Muhammetgulyyev A., Erbas Ö. G. , Kinaci B. , Donmez Ö. , Celebi Y. G. , Erol A.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.34, no.8, 2019 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 34 Issue: 8
  • Publication Date: 2019
  • Doi Number: 10.1088/1361-6641/ab23ab
  • Title of Journal : SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Keywords: GaAsBi solar cell, midgap trap, metallic cluster, GaBi, Schottky junction, dilute bismide, RECOMBINATION

Abstract

The structural and photovoltaic properties of the GaAs/GaAsBi pin solar cell with GaAs0.983Bi0.017 active layer are investigated by optical and electrical measurement techniques. The bandgap of GaAsBi active layer is determined to be 1.3 eV at room temperature. Current density-voltage (J-V) under AM 1.5G spectrum and spectral response measurements are carried out to determine photovoltaic properties of the solar cell. The presence of a midgap trap levels in GaAsBi active layer is identified by deep level transient spectroscopy (DLTS). J-V characteristics is analysed by using Sah-Noyce-Shockley (SNS) theory which includes the midgap trap found in DLTS measurement. The observed deviation between experimental and calculated J-V results is ascribed for metallic cluster formation at the interface between GaAs emitter and GaAsBi intrinsic active layer. Interface metallic clusters create local Schottky junction between emitter and active layers. The best fit to the experimental J-V characteristic of the solar cell is obtained by considering the presence of GaBi metallic cluster at the interface between GaAs emitter and GaAsBi active layer of the solar cell. We showed that work function of interface clusters have a significant effect on the open circuit voltage and filling factor.