Low temperature chemical treatment of graphene films made by double self-assembly process to improve sheet resistance

Arat R., Jia G., Plentz J.

DIAMOND AND RELATED MATERIALS, cilt.111, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 111
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.diamond.2020.108218
  • Dergi Adı: DIAMOND AND RELATED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Graphene deposition, Hydro iodic acid, Double self-assembly process, Sheet resistance, RAMAN-SPECTROSCOPY, AQUEOUS DISPERSIONS, GRAPHITE OXIDE, REDUCTION, ELECTRON, DEFECTS, GROWTH, VAPOR
  • İstanbul Üniversitesi Adresli: Hayır

Özet

In this study, a low temperature hydro iodic acid (HI) vapor treatment of the self-assembled graphene films has been developed, and the electrical, optical, structural and morphological properties were investigated by four point probe, UV-Visible spectroscopy, Raman spectroscopy and scanning electron microscopy (SEM). Mono-, doubleand triple-layer of graphene flakes were deposited on glass substrates by using the Double Self-Assembly (DSA) process. The self-assembled graphene films were treated with HI vapors at 40 degrees C for different time intervals between 1 and 24 h. In addition, graphene deposition and HI-vapor treatment (at 40 degrees C for 1 h) was enforced three times to the same substrate. The optical transparency values of the self-assembled mono- (MGFs), double- (DGFs) and triple-layer graphene flakes (TGFs) were measured as 91, 85 and 80%, respectively (values at 550 nm). Due to the HI-vapor treatment, the sheet resistance of MGFs significantly reduced from 1.1 x 10(7) Omega omega square(-1) to 2.9 x 10(4) omega square(-1), the transparency of the graphene films slightly reduced by 2-5%, the I-D/I-G ratio of the DGFs decreased from 1.01 to 0.81, while the I-2D/I-G ratio increased from 0.43 to 0.48 in the Raman spectrum. Thanks to its impressive reducing effect on sheet resistance, HI-vapor treatment can be a suitable method to improve the conductivity of low-cost large area graphene films.