Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells

Mazzucato, S.; Erol, Ayşe; Teke, A.; Arikan, Mehmet; Potter, R.; Balkan, Naci; Marie, X.; Boland-Thoms, A; Carrere, H.; Bedel, E.; Lacoste, G.; Fontaine, C.; Arnoult, A.

doi:10.1016/s1386-9477(02)00786-5

Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells

Atıf İçin Kopyala

Mazzucato S., Erol A., Teke A., Arikan M. Ç., Potter R., Balkan N., ...Daha Fazla

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.17, ss.250-251, 2003 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 17
Basım Tarihi: 2003
Doi Numarası: 10.1016/s1386-9477(02)00786-5
Dergi Adı: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.250-251
İstanbul Üniversitesi Adresli: Evet

Özet

We have studied the optical quality of sequentially grown undoped Ga0.8In0.2As and Ga0.8In0.2N0.015As0.985 quantum wells (QWs). Spectral and time-resolved in-plane photovoltage (IPV) and photo-induced transient spectroscopy (PITS) techniques were used in this investigation. Two clear peaks have been observed and analysed in the PITS experiment. Spectral and transient IPV in the same samples has been investigated and a selective light was used as the excitation source to separate the GaInNAs IPV from the other layers. IPV can be explained in terms of random fluctuations of the Fermi level in undoped QWs. Spectral and time-resolved IPV measurements can therefore be used to obtain qualitative and quantitative information about interband transitions and trap activation energies. (C) 2002 Elsevier Science B.V. All rights reserved.