Analysis of mixed optical transitions in dilute magnetic AlAs/GaAs/ GaMnAs quantum wells grown on high substrate index by molecular beam epitaxy

Kerimova S., Dönmez Ö., Gunes M., Kuruoğlu F., Aydın M., Gümüş C., ...Daha Fazla

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.290, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 290
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1016/j.mseb.2023.116349
  • Dergi Adı: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Finite element methods, GaMnAs, High index substrate, Optical transition, Photomodulated reflectance
  • İstanbul Üniversitesi Adresli: Evet

Özet

In this study, we report the influence of high-index substrate orientation on the optical properties of dilute Mn containing a single quantum well (QW) structure grown by molecular beam epitaxy (MBE). The electronic band structure of the samples is calculated with finite element methods (FEM). Photomodulated reflectance (PR) spectroscopy is employed to determine the optical transition energies at room temperature. PR experimental results are analyzed with the Third Derivative Functional Form (TDFF) signal function. TDFF fitting shows that the optical transition starts below the fundamental GaAs bandgap energy for the samples grown on (311) B and (411) B-oriented substrates. Comparing TDFF fitting and calculated optical transition energies with FEM show that the optical transition occurs in type-I and type-II as direct and indirect transitions, respectively. Type-I and -II optical transitions are addressed concerning the electronic band structure of the sample grown on oriented substrates.