Muonium in 4H silicon carbide

Celebi Y. G. , Lichti R. L. , Carroll B. R. , King P. J. C. , Cox S. F. J.

PHYSICA B-CONDENSED MATTER, vol.404, pp.5117-5120, 2009 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 404
  • Publication Date: 2009
  • Doi Number: 10.1016/j.physb.2009.08.246
  • Page Numbers: pp.5117-5120


Data for low-field muon spin rotation spectra for 4H-SiC is presented for a wide temperature range from 10 to 1400 K. At low temperatures, dependence of amplitude transitions for all the samples show carrier capture processes. For p-type sample in the intermediate temperature region transition energies imply both donor and acceptor ionizations. In n-type and high resistivity samples a fast decaying component is observed for temperatures between 900 and 1400 K. Amplitude of this signal as the temperature is elevated starts to dominate, implying that the center represented by this signal is the ground charge state for both samples. We will discuss some of the amplitude transitions and give the energy values associated with these transitions. (C) 2009 Elsevier B.V. All rights reserved.