Effect of Chemical Doping of 2D TMDs on Optical and Electrical Properties

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Hut E., Bostan Y. K., Kalyon G., Armstronge A., Mckenna K., Wang Y., ...Daha Fazla

2D Material Conference, Munich, Almanya, 3 - 08 Haziran 2024, ss.99

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: Munich
  • Basıldığı Ülke: Almanya
  • Sayfa Sayıları: ss.99
  • İstanbul Üniversitesi Adresli: Evet

Özet

In the past decade, 2D Transition Metal Dichalcogenides (TMDs) have emerged as promising alternatives to Si-based technologies. A major challenge associated with TMDs is their high contact resistance. Several studies have aimed to mitigate this issue by doping TMDs with 1,2-dichloroethane (DCE) solution, and this has been successfully demonstrated for MoS2. In this study, we provide an in-depth analysis of the optical consequences of this doping technique by employing photoluminescence (PL) and Raman measurements on MoS2 layers post-growth DCE treatment. Our findings indicate a significant drop, exceeding 50%, in the PL intensity of the indirect transition for 2-layer MoS2 following only 1-minute DCE treatment. Notably, the direct transition remains unaffected. Comparable outcomes were observed for MoS2 layers ranging from 4 to 7 and multi-layers exceeding 7 layers. Based on these results, we present a valuable guide detailing the thickness and time dependencies of DCE doping across various MoS2 layers.