Design of an Ultra-Wideband GaN Power Amplifier via Real Frequency Technique

Kilinc S., Yarman B. S.

18th Mediterranean Microwave Symposium (MMS), İstanbul, Turkey, 31 October - 02 November 2018, pp.179-182 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.179-182
  • Istanbul University Affiliated: Yes


This study covers the design steps of a power amplifier prototype which is designed regarding maximum gain and efficiency levels in an ultra-wide bandwidth using real frequency technique. The designed prototype operates from near DC frequencies up to 3 GHz with around 13.5 dB power gain and delivers approximately 40.5 dBm or 11 Watts of power. The power added efficiency of the device varies between 53% to 72% in the wide operation bandwidth. CGH40010F GaN HEMT device of Wolfspeed-Cree Company is used in the design. The design based on the real frequency matching technique using pulled source and load impedance data of the active device. Using appropriate source and load impedances obtained for the optimum gain and efficiency levels, lumped element prototype is generated employing impedance based real frequency single matching technique. Some of the lumped elements are replaced with their distributed counterparts, the rest are replaced with real element models to simulate parasitic effects and loss of real components more reliably. Finally, overall performance of the system is reoptimized, successful results are obtained and presented.