Determination of the acoustic phonon-hot carriers interaction in n- and p-type modulation-doped GaInNAs/GaAs quantum wells

Dönmez Ö., Sarcan F., Erol A.

Physica B: Condensed Matter, cilt.612, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 612
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.physb.2021.412946
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Hot carrier transport, Power loss mechanism, Acoustic phonon scattering, Modulation-doped GaInNAs, High field transport, ELECTRON-MOBILITY, ENERGY-LOSS, GAAS, GAIN
  • İstanbul Üniversitesi Adresli: Evet

Özet

© 2021 Elsevier B.V.We report on the power loss mechanisms of hot carries in as-grown and annealed n- and p-type modulation-doped GaAs/Ga0.68In0.32NyAs1-y (y = 0.009, and 0.012) quantum well structures considering acoustic phonon interactions via the deformation potential (non-polar) and piezoelectric (polar) scatterings. By analysis of the applied electric field dependent amplitude of the Shubnikov de Haas oscillations, it has been revealed that incorporation of N atom into Ga0.68In0.32As switches the dominant power loss mechanism from non-polar to polar mechanism. The piezoelectricity of n- and p-type Ga0.68In0.32NyAs1-y alloys is at least three times higher than N-free samples. A comparison between as-grown n- and p-type samples depicts that the p-type sample's piezoelectricity is higher than that of n-type samples. After thermal annealing, there is a slight decrement and increment in piezoelectric stress constant for n-type the sample with 0.9% and 1.2% N, respectively.