Muonium defect levels in Czochralski-grown silicon-germanium alloys

Carroll B. R., Lichti R. L., King P. J. C., Celebi Y. G., Yonenaga I., Chow K. H.

PHYSICAL REVIEW B, vol.82, no.20, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 82 Issue: 20
  • Publication Date: 2010
  • Doi Number: 10.1103/physrevb.82.205205
  • Journal Name: PHYSICAL REVIEW B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Istanbul University Affiliated: Yes

Abstract

We report Muonium (Mu) donor and acceptor levels in Czochralski-grown Silicon Germanium alloys (Cz-Si1-xGex). Measurement of these defect energies provides an analogous examination of Hydrogen defects that are otherwise inaccessible. Temperature-dependent Muonium fractions in several alloy samples (x=0.20,0.45,0.77,0.81,0.84,0.90,0.91,0.94,0.98) show charge-state transitions assigned to Mu donor and acceptor ionizations. Our results indicate a deep Mu donor level across the alloy system. The Mu acceptor level is deep in pure Si and valence-band resonant in pure Ge; we specifically examine the compositional dependence of the MuT0 acceptor ionization energy in Ge-rich alloys, where this level crosses into the valence band.

We report Muonium (Mu) donor and acceptor levels in Czochralski-grown Silicon Germanium alloys (Cz-Si(1-x)Ge(x)). Measurement of these defect energies provides an analogous examination of Hydrogen defects that are otherwise inaccessible. Temperature-dependent Muonium fractions in several alloy samples (x = 0.20, 0.45, 0.77, 0.81, 0.84, 0.90, 0.91, 0.94, 0.98) show charge-state transitions assigned to Mu donor and acceptor ionizations. Our results indicate a deep Mu donor level across the alloy system. The Mu acceptor level is deep in pure Si and valence-band resonant in pure Ge; we specifically examine the compositional dependence of the Mu(T)(0) acceptor ionization energy in Ge-rich alloys, where this level crosses into the valence band.