Well-ordered nanoparticle arrays for floating gate memory applications

Kuruoglu F., Çalışkan M., Serin M., Erol A.

NANOTECHNOLOGY, cilt.31, sa.21, 2020 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 31 Sayı: 21
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1088/1361-6528/ab7043
  • Dergi Adı: NANOTECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Communication Abstracts, Compendex, EMBASE, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: non-volatile memory, Au nanoparticle, well-ordered, Coulomb blockade, electron beam lithography, RAPID-THERMAL-OXIDATION, DIELECTRICS, THICKNESS, DEVICE, LAYER
  • İstanbul Üniversitesi Adresli: Evet

Özet

A non-volatile floating gate memory device containing well-ordered Au nanoparticles (NPs) is fabricated as a metal-oxide-semiconductor capacitor structure. With superior control on the size, shape and position of nanoparticles, the presented nano-floating gate memory (NFGM) device possesses almost perfect precision of device geometry. The well-ordered Au NPs embedded within the memory device exhibit large memory window at low operation voltages (8.8V @ 15V), fast operation time (<10(-4) s) and good retention (up to 10(7) s). In this work, the structural properties of the NFGM device are correlated with the examined electrical properties. The current results are compared with the other studies in the literature to emphasis the advantages of the precise ordering and geometry of the NPs.