Akademik Veri Yönetim Sistemi
2D Materials Conference, Munich, Almanya, 3 - 08 Haziran 2024, ss.1
In recent years, semiconducting two-dimensional transition metal dichalcogenides (2D-TMDs) have become a group of highly demanded materials for next-generation optoelectronic devices such as photodetectors and light emitters because of their unique optical, electronic, and structural properties. Despite many advantages of these semiconducting materials, there are some drawbacks such as low carrier concentration and mobility, which result in low electrical conductivity and poor diode characteristics compared to the materials already widely used in electronic/optoelectronic technologies, such as Si and GaAs. Their high sensitivity against environments/external effects which is thought of as a weakness, can be turned to be an advantage to dope them and to tailor their properties by using post-growth defect engineering methods. Focused ion beam (FIB) has shown great potential in material/surface modification and defect engineering in 2D materials more recently, to tailor their optical and electronic properties. On the other hand, UV-ozone (UV-O3) exposure is another powerful technique for a wide range of applications such as controllable doping, layer-by-layer thinning, etc. A better understanding and control of defects are important to move forward in the field of defect engineering for potential electronic and optoelectronic applications of 2D-TMDs. In this study, we discussed fabrication details for controllable defect engineering and the effect of ion beam and UV-O3 exposure on the optical and electrical properties of 2D-TMDs.