Investigation of Structural and Electrical Properties of Flat a-Si/c-Si Heterostructure Fabricated by EBPVD Technique

Creative Commons License

Demiroğlu D., Tatar B., Kazmanlı M. K., Ürgen M. K.

AIP CONFERENCE PROCEEDINGS, cilt.1569, sa.1, ss.158-161, 2013 (SCI-Expanded)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 1569 Sayı: 1
  • Basım Tarihi: 2013
  • Dergi Adı: AIP CONFERENCE PROCEEDINGS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.158-161
  • İstanbul Üniversitesi Adresli: Hayır

Özet

Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height ΦB, diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.