Photoluminescence characteristic of as-grown and thermally annealed n-and p-type modulation-doped Ga(0.68)In(0.32)N(x)AS(1-x)/GaAs quantum well structures

Donmez O., Sarcan F., Erol A., Ungan F., Sari H.

THIN SOLID FILMS, cilt.732, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 732
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.tsf.2021.138785
  • Dergi Adı: THIN SOLID FILMS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Dilute nitride, Finite element method, Rapid thermal annealing, Band anti-crossing, Schrodinger-Poisson equation, SEMICONDUCTOR OPTICAL AMPLIFIER, SOLAR-CELLS, DEEP LEVELS, GAINNAS, NITRIDE, EFFICIENCY
  • İstanbul Üniversitesi Adresli: Evet

Özet

The electronic band structure of n- and p-type modulation-doped Ga0.68In0.32NyAs1-y/GaAs (y=0, 0.9, 1.2, 1.7) quantum well is calculated using the 10 band k.p model and the finite element method for valance band (VB) and band anti-crossing model for conduction band. Experimental characterization has been carried out temperature dependent photoluminescence (PL) measurements at room temperature. It is determined that optical transition occurs between the first quantized energy level in the conduction band (CB) and VB for n-type samples. While it occurs between localized level and VB, due to empty of the localized level closes CB for p-type samples. It is observed that the intensity of PL emission is higher for p-type samples and the effective bandgap energy redshifts with increasing Nitrogen (N) concentration. Rapid thermal annealing improves the optical quality and causes a blueshift effect. We have determined a similar amount of the blueshift for n-type N-free and N-containing samples, which may be the interdiffusion of the In/Ga atoms. The temperature dependency of the bandgap energies has been fitted using a semi-empirical Varshni equation. It has been observed that thermal Debye temperature and thermal expansion coefficient decreases with N. The redshift of the temperature dependence of the bandgap becomes larger as N concentration decreases. On the other hand, the annealing process causes a reduction in the temperature dependency of the bandgap for p-type samples