Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures

DÖNMEZ Ö. , AYDIN M. , Ardali S., YILDIRIM S. , Tiras E., EROL A. , ...Daha Fazla

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.35, 2020 (SCI İndekslerine Giren Dergi) identifier

  • Cilt numarası: 35 Konu: 9
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1088/1361-6641/ab94d9


We report on the power loss mechanisms of hot electrons in as-grown and annealed n-type modulation-doped Al0.15Ga0.85As/GaAs1-xBix(x= 0 and 0.04) quantum well structures considering acoustic phonon interactions via the deformation potential (non-polar) and piezoelectric (polar) scatterings. The two-dimensional (2D) electron gas is heated by applying various electric fields under a steady-state magnetic field, and the effect of the applied electric field on the Shubnikov de Haas (SdH) oscillations is analyzed to investigate the power loss mechanism. The temperature of hot electrons (T-e) has been obtained by comparing the lattice temperature and applied electric field dependencies of the SdH oscillation amplitude. The hot electron temperature is almost the same for both Bi-free and Bi-containing samples except for the sample annealed at a higher temperature (700 degrees C) than the growth temperature of GaAsBi. The electron temperature dependence of power loss is analyzed using current theoretical analytic models derived for 2D semiconductors. We find that energy relaxation occurs in the intermediate temperature regime, including mixing of piezoelectric and deformation potential scattering. The power loss of hot electrons is found to be proportional to (Te gamma-TL gamma