Muonium transitions in 4H silicon carbide

Celebi, YAŞAR; Lichti, R.; Bani-Salameh, H.; Meyer, A.; Carroll, B.; Vernon, J.; King, P.; Cox, S.

doi:10.1016/j.physb.2008.11.155

Muonium transitions in 4H silicon carbide

Celebi Y. G., Lichti R. L., Bani-Salameh H. N., Meyer A. G., Carroll B. R., Vernon J. E., ...More

Physica B: Condensed Matter, vol.404, pp.845-848, 2009 (SCI-Expanded, Scopus)

Publication Type: Article / Article
Volume: 404
Publication Date: 2009
Doi Number: 10.1016/j.physb.2008.11.155
Journal Name: Physica B: Condensed Matter
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Page Numbers: pp.845-848
Istanbul University Affiliated: Yes

Abstract

Preliminary low-field data on the diamagnetic muon spin rotation signal in 4H-SiC are presented. The initial results on all three electrical types of 4H-SiC are compared with those for the 6H polytype. Analysis of amplitude transitions at low temperatures in n- and p-type samples indicates carrier capture. At temperatures above 600 K, an increase in diamagnetic amplitude and an associated dip in the phase indicate a slowly formed state in the p-type material. We discuss possible identification of transitions evident from temperature dependent diamagnetic amplitudes and correlations with neutral muonium centers. (c) 2008 Elsevier B.V. All rights reserved.