Zero-bias offsets in I-V characteristics of the staircase type quantum well infrared photodetectors
APPLIED SURFACE SCIENCE, vol.318, pp.95-99, 2014 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 318
- Publication Date: 2014
- Doi Number: 10.1016/j.apsusc.2014.01.054
- Journal Name: APPLIED SURFACE SCIENCE
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.95-99
- Istanbul University Affiliated: Yes
Abstract
In this work, observed zero-bias offsets in I-V characteristics and differences in J-V characteristics of staircase quantum well infrared photodetectors were investigated. Temperature and voltage sweep rate dependence of the zero-bias offsets were studied on mesa structures shaped in different diameters. Furthermore, effect of mesa diameter on J-V characteristics was investigated. The temperature, initial bias voltage and voltage sweep rate dependence of the zero-bias offsets were explained by a qualitative model, which is based on a RC equivalent circuit of the quantum well infrared photodetector. (C) 2014 Elsevier B.V. All rights reserved.