A New Fully Integrated High Frequency Full-Wave Rectifier Realization


BAŞAK M. E., Kacar F.

INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, cilt.45, sa.2, ss.101-109, 2015 (SCI-Expanded) identifier identifier

Özet

In this paper, a new fully integrated high frequency precise full-wave rectifier which consists of a floating current source (FCS) and four complementary MOS transistors is presented. The presented circuit has an appropriate zero crossing performance, linearity, low component count, and can be adapted to modern IC technologies. It is also suitable for monolithic integrated implementation. Rectifier performance is simulated based on 0.18 mu m CMOS technology. The proposed full-wave rectifier circuit provides an operating frequency more than 1 GHz, produces an input operating range from -300 mV to 300 mV and its power consumption is 825 mu W. LTSPICE simulation results of the circuit are presented which verify the workability of the proposed circuit. Noise analysis is also performed. The equivalent output noise of voltage mode rectifier at the 100 MHz is found as 7.13 nV root Hz. It also exhibits good temperature stability. The presented circuit does not require any passive component; therefore it is suitable for integrated circuit implementation. The proposed circuit exhibits the high frequency operation, the lower power consumption and has the simplest structure compared to all other available works.