Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurements
JOURNAL OF LUMINESCENCE, cilt.255, 2023 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 255
- Basım Tarihi: 2023
- Doi Numarası: 10.1016/j.jlumin.2022.119543
- Dergi Adı: JOURNAL OF LUMINESCENCE
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC
- Anahtar Kelimeler: Franz-Keldysh effect, InGaN layer, Spectral photo-conductivity, Surface photo-voltage
- İstanbul Üniversitesi Adresli: Evet
Özet
Within a p-i-n LED structure, energy band gaps of MOCVD grown %10 In content InGaN and GaN layers were obtained through traditional UV-Visible transmission-absorption measurements and utilizing surface photo -voltage (SPV) and spectral photoconductivity (SPC) measurements. Moreover, all applied techniques determined that the total band offset between InGaN and GaN layers were around 0.3-0.4 eV. Furthermore, the temperature dependence of band gaps of each InGaN and GaN layer was analyzed through a modified Varshni relation where both Varshni coefficients and band tail energy width were explored. Band tails in a modified Varshni relation, SPV and SPC measurements were in agreement with each other and originated Franz-Keldysh Effect attributed to the presence of photon assisted tunneling.