Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells

Sun Y., Balkan N., Erol A., Arikan M. C.

MICROELECTRONICS JOURNAL, cilt.40, sa.3, ss.403-405, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 40 Sayı: 3
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.mejo.2008.06.010
  • Dergi Adı: MICROELECTRONICS JOURNAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.403-405
  • İstanbul Üniversitesi Adresli: Evet

Özet

We present electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures. The Hall mobility of electrons in the n-type material decreases dramatically with increasing nitrogen composition. The mobility of 2D holes in p-modulation-doped quantum wells is significantly higher than that of 2D electrons in n-modulation-doped material with similar nitrogen concentration. The mobility of 2D electrons is discussed using a S-matrix model for N-related alloy scattering. The results indicate that the electron mobility is intrinsically limited by scattering from nitrogen complexes. The high mobility of 2D holes is explained in terms of negligible effect of nitrogen on valance band and the absence of scattering with localized nitrogen complexes. (C) 2008 Elsevier Ltd. All rights reserved.