Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz

Yarman B. S., Retdian N., Takagi S., Fujii N.

International Symposium on Signals, Circuits and Systems, Iasi, Romanya, 12 - 13 Temmuz 2007, ss.65-66 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Basıldığı Şehir: Iasi
  • Basıldığı Ülke: Romanya
  • Sayfa Sayıları: ss.65-66
  • İstanbul Üniversitesi Adresli: Evet

Özet

In this paper, gain bandwidth limitations of a regularly processed 0.18 mu m Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18 mu m Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.