Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz

Yarman B. S., Retdian N., Takagi S., Fujii N.

International Symposium on Signals, Circuits and Systems, Iasi, Romania, 12 - 13 July 2007, pp.65-66 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume:
  • City: Iasi
  • Country: Romania
  • Page Numbers: pp.65-66
  • Istanbul University Affiliated: Yes

Abstract

In this paper, gain bandwidth limitations of a regularly processed 0.18 mu m Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18 mu m Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.