Design and Implementation of a High-Efficiency 250W Power Amplifier for RF Heating Applications
3rd International Microwave and Antenna Symposium-IMAS, Nairobi, Kenya, 21 - 23 October 2025, (Full Text)
- Publication Type: Conference Paper / Full Text
- Doi Number: 10.1109/imas66694.2025.11387142
- City: Nairobi
- Country: Kenya
- Istanbul University Affiliated: Yes
Abstract
This study presents the design, implementation, and performance analysis of a 250 W power amplifier (PA) with a 14 dB gain, operating at a center frequency of 2450 MHz for RF heating applications. The amplifier utilizes a CGH21240F GaN HEMT transistor mounted on an RT5870 substrate, with carefully designed input and output matching circuits. These matching networks were optimized using load-pull and source-pull analyses to maximize both output power and efficiency. Simulation results indicated that the output power exceeding 54 dBm and a power-added efficiency (PAE) above 64%. Upon fabricating the circuit with precision assembly on a milled printed circuit board, experimental measurements confirmed the simulated performance, achieving an output power of 54 dBm and a PAE over 63%. Harmonic analysis demonstrated effective suppression of higher-order harmonics, confirming the amplifier's ability to deliver high-power output with minimal distortion.