Electrical switching in TlSbSe2 chalcogenide semiconductors

Kalkan N., Yildirim S., Ulutas K., Deger D.

JOURNAL OF ELECTRONIC MATERIALS, vol.37, no.2, pp.157-160, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 37 Issue: 2
  • Publication Date: 2008
  • Doi Number: 10.1007/s11664-007-0318-y
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.157-160
  • Keywords: ternary crystals, TlSbSe2, negative differential resistance (NDR), threshold-type switching, SINGLE-CRYSTALS, CONDUCTION PROPERTIES, OPTICAL-PROPERTIES, BULK, GLASSES, MEMORY, DEPENDENCE, TLINTE2, TLINSE2
  • Istanbul University Affiliated: Yes


Electrical measurements were performed on TlSbSe2 ternary crystals in the temperature range 293-413 K. The obtained I-V characteristics consist of two regions: an Ohmic region at low current densities, and nonlinear regions having negative differential resistance (NDR) at moderate and higher current densities. The nonlinear behavior of the I-V curves was studied at different ambient temperatures. The sample temperature and the threshold voltage of the NDR region were also examined as a function of the ambient temperature. We detected that the investigated samples exhibit threshold-type switching and propose that the switching mechanism has an electronic origin.