A novel hot carrier-induced blue light-emitting device

Mutlu S., Erol A., Arslan E., Ozbay E., Lişesivdin S. B., Tiras E.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.881, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 881
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.jallcom.2021.160511
  • Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Public Affairs Index, Civil Engineering Abstracts
  • Anahtar Kelimeler: Top-Hat HELLISH, InGaN, GaN multi quantum well, Field effect, XOR logic, Blue light, P-TYPE GAN, RESISTANCE OHMIC CONTACTS, ABSORBING HETEROJUNCTION, SURFACE EMISSION, QUANTUM-WELLS, NI/AU, ACTIVATION, MECHANISM, VCSOA, GAAS
  • İstanbul Üniversitesi Adresli: Evet

Özet

In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasing in a Semiconductor Heterostructure (Top-Hat HELLISH) is investigated. A heterojunction structure is designed based on an active InGaN quantum well placed in the n-type GaN region sandwiched by the n-and p-type GaN layers. The four quantum well structure of an InGaN/GaN heterojunction where the Indium ratio is 0.16 has been grown via Metal-Organic Chemical Vapor Deposition. In order to create an anisotropic potential distribution of the heterojunction, it is aimed to fabricate TH-HELLISH-GaN device in Top-Hat HELLISH (THH) geometry for four contacts with separate n-and p-channels. High-speed I-V measurements of the device reveal an Ohmic characteristic at both polarities of the applied voltage. Integrated EL measurements reveal the threshold of the applied electric field at around 0.25 kV/cm. The emission wavelength of the device is around 440 +/- 1 nm at room temperature. (c) 2021 Elsevier B.V. All rights reserved.