Dielectric properties of E-Beam evaporated WO3 thin films


YILDIRIM S. , Evecan D., Zayim Özkan E.

Turkish Physical Society 34th International Physics Congrees, Muğla, Turkey, 5 - 09 September 2018, vol.34, pp.154

  • Publication Type: Conference Paper / Summary Text
  • Volume: 34
  • City: Muğla
  • Country: Turkey
  • Page Numbers: pp.154

Abstract

DIELECTRICAL PROPERTIES OF E-BEAM EVAPORATED WO3 THIN FILMS

 

 

  1. SAFFETTİN YILDIRIM,  2. DİLEK EVECAN, 3. ESRA ÖZKAN ZAYİM

 

1. Istanbul University, Science Faculty, Physics Department, Vezneciler, Fatih-İstanbul, Türkiye,  safyield@istanbul.edu.tr     

 

2. Istanbul Technical University, Faculty of Science and Letter, Physics Engineering Department, Maslak-İstanbul, Türkiye,  evecandilek@gmail.com

 

3. Istanbul Technical University, Faculty of Science and Letter, Physics Engineering Department, Maslak-İstanbul, Türkiye, ozesra@itu.edu.tr

 

 

 

Tungsten trioxide (WO3) thin films are one of the best transition metal oxides for optical and electronic applications. In the past several decades, WO3 have been deliberated in many fields such as nano and microelectronic, optoelectronic and electrocromic devices, humidity and temperature sensors, solar energy, flat panel display systems. WO3 thin films exhibits a wide variety of novel properties, particularly in thin film form. WO3 thin films prepared by electron beam deposition in an partial pressure of 5×10−6 Torr and on corning glass substrate. The dielectric properties of WO3 thin films have been investigated in the frequency range of 0.01 - 105 Hz and the temperature range of 183 - 373 K, using ohmic Al electrodes. The surface roughness and the grain size also increased as the substrate temperature increased. The dielectric constant and dielectric loss factor were found to decrease with increasing frequency and increase with increasing temperature. The frequency and temperature dependence of ac conductivity has also been determined.