Figure of Merit of (Sb0.75Bi0.25)(2-x) In (x) Te2.8Se0.2 Single Crystals

Drasar C., Hovorkova A., Lostak P., Ballikaya S., Li C. -., Uher C.

JOURNAL OF ELECTRONIC MATERIALS, cilt.39, sa.9, ss.1760-1763, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 39 Sayı: 9
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1007/s11664-010-1172-x
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1760-1763
  • İstanbul Üniversitesi Adresli: Evet

Özet

We have shown previously that indium doping is beneficial for thermoelectric properties of (Sb0.75Bi0.25)(2)Te-3. This effect was ascribed to a change in the magnitude and mechanism of hole scattering and a decrease in thermal conductivity. Since the state-of-the-art material for p-type legs in low-temperature applications is the quaternary Bi0.5Sb1.5Te3-y Se (y) , we have attempted to dope this material with In, hoping to improve its properties further. Indeed, the doping enhances the figure of merit of (Sb0.75Bi0.25)(2-x) In (x) Te2.8Se0.2 by more than 15% compared with the values measured on undoped (Sb0.75Bi0.25)(2)Te2.8Se0.2 below room temperature.