Electrical and optical properties of point defects in ZnO thin films

Can, MUSA; Shah, S.; Doty, Matthew; Haughn, Chelsea; Firat, Tezer

doi:10.1088/0022-3727/45/19/195104

Electrical and optical properties of point defects in ZnO thin films

Can M. M., Shah S. I., Doty M. F., Haughn C. R., Firat T.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.45, sa.19, 2012 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 45 Sayı: 19
Basım Tarihi: 2012
Doi Numarası: 10.1088/0022-3727/45/19/195104
Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
İstanbul Üniversitesi Adresli: Hayır

We show that the deposition of ZnO films under varying oxygen partial pressure and annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.

We show that the deposition of ZnO films under varying oxygen partial pressure and
annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.