The capacitance-voltage-temperature (C-V-T) and the conductance/angular frequency-voltage-temperature (G/omega-V-T) characteristics of Au/TiO2(rutile)/n-Si Schottky barrier diodes (SBDs) were investigated over the temperature range from 200 K to 380 K by considering the series resistance effect. Titanium dioxide (TiO2) was deposited on n-type silicon (Si) substrate using a direct-current (DC) magnetron sputtering system at 200A degrees C. To improve the crystal quality, the deposited film was annealed at 900A degrees C to promote a phase transition from the amorphous to rutile phase. The C (-2) versus V plots gave a straight line in the reverse-bias region. The main electrical parameters, such as the doping concentration (N (D)), Fermi energy level (E (F)), depletion layer width (W (D)), barrier height (N" (CV)), and series resistance (R (S)), of Au/TiO2(rutile)/n-Si SBDs were calculated from the C-V-T and the G/omega-V-T characteristics. The obtained results show that N" (CV), R (S), and W (D) values decrease, while E (F) and N (D) values increase, with increasing temperature.