In this study, the structural, morphological, optical, as well as electrical properties of the titanium doped (wt 5%) ZnO (TZO) thin film grown with the RF sputtering system was examined. TZO thin films were deposited on both corning glass (CG) and n-type Si substrates. It was determined that the TZO thin film deposited on CG has crystallinity, good surface homogeneity, low surface roughness as well as suitable band gap value from X-Ray diffraction (XRD), atomic force microscopy (AFM) as well as UV-Vis analysis. In addition, TZO thin film deposited on the n-Si substrate was used to determine the electrical properties. The current-voltage (I-V) measurements of the Au/TZO/n-Si structure was done at 80 K and 300 K. Capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements of the Au/TZO/n-Si structure was examined for 0.3, 0.5 and 1 MHz.