Structural, morphological, optical and electrical properties of the Ti doped-ZnO (TZO) thin film prepared by RF sputter technique

Bairam C., Yalcin Y., EFKERE H. İ., ÇOKDUYGULULAR E., ÇETİNKAYA Ç., KINACI B., ...Daha Fazla

PHYSICA B-CONDENSED MATTER, cilt.616, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 616
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.physb.2021.413126
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: ZnO, TZO, RF magnetron Sputtering, Crystal quality, Surface morphology, Electrical properties, SCHOTTKY DIODES, TEMPERATURE, NANORODS, VOLTAGE, GROWTH, NANOCOMPOSITES, NANOWIRES, LAYER
  • İstanbul Üniversitesi Adresli: Evet

Özet

In this study, the structural, morphological, optical, as well as electrical properties of the titanium doped (wt 5%) ZnO (TZO) thin film grown with the RF sputtering system was examined. TZO thin films were deposited on both corning glass (CG) and n-type Si substrates. It was determined that the TZO thin film deposited on CG has crystallinity, good surface homogeneity, low surface roughness as well as suitable band gap value from X-Ray diffraction (XRD), atomic force microscopy (AFM) as well as UV-Vis analysis. In addition, TZO thin film deposited on the n-Si substrate was used to determine the electrical properties. The current-voltage (I-V) measurements of the Au/TZO/n-Si structure was done at 80 K and 300 K. Capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements of the Au/TZO/n-Si structure was examined for 0.3, 0.5 and 1 MHz.