Annealing effects of ZnO thin films on p-Si(100) substrate depositedby PFCVAD


Kara Koç K., Şenadım Tüzemen E., Esen R.

Turkish Journal of Physics, vol.38, pp.238-244, 2014 (Scopus)

  • Publication Type: Article / Article
  • Volume: 38
  • Publication Date: 2014
  • Journal Name: Turkish Journal of Physics
  • Journal Indexes: Scopus, TR DİZİN (ULAKBİM)
  • Page Numbers: pp.238-244
  • Istanbul University Affiliated: Yes

Abstract

In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We report the effect of annealing temperature on structural and optical properties. The crystallographic structure and the size of the crystallites in the  films were studied by means of X-ray diffraction. The films had a weak peak (100) orientation at 2tetha  = 32. X-ray diffraction analysis of the as-deposited ZnO and the  annealed at 850 C showed a strong ZnO (002) diffraction peak centered at 34.1 and 34.5, respectively. The (004) peak was seen for  film annealed at 850 C. ZnO film annealed at 850 C had higher grain size and better crystallinity. Optical properties of the ZnO  films were studied using a UV-Vis-NIR spectrophotometer. The optical band gap of the films was determined using the refctance spectra by means of the Kubelka Munk formula. From the optical properties, the band gap energy estimated for films as-deposited and annealed at 850 C was 3.00 and 3.28 eV, respectively. The Raman scattering spectra of the  films was observed at a laser power of 2 mW.