Relaxation Spectrum of the TlSbSe2 Thin Films


DEĞER ULUTAŞ D. , ULUTAŞ H. K. , YILDIRIM S. , KALKAN N.

25thInternational Conference on Defects in Semiconductors,, Russia, 1 - 04 July 2009, pp.329

  • Publication Type: Conference Paper / Full Text
  • Country: Russia
  • Page Numbers: pp.329

Abstract

Dielectric constant and the dielectric loss of TlSbSe2 thin films, obtained via thermal

evaporation of TlSbSe2 crystals grown by Stockber–Bridgman technique, have

been measured using ohmic Al electrodes in the frequency range 0.2–100 KHz and

within the temperature interval 293–353 K. Dielectric constant is found to decrease

with increasing frequency and increase with increasing temperature. The activation

energy values were evaluated and there is a good agreement between the activation

energy values obtained from capacitance and dielectric loss factor measurements. The

variation of the relaxation time with frequency has also been determined.