Degraded power MOSFET effects on Class-A power amplifier: Modelling studies considering feedback

Meydanci M. A., ÖZÇELEP Y.

MICROELECTRONICS RELIABILITY, vol.122, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 122
  • Publication Date: 2021
  • Doi Number: 10.1016/j.microrel.2021.114164
  • Journal Name: MICROELECTRONICS RELIABILITY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Communication Abstracts, Computer & Applied Sciences, INSPEC, DIALNET
  • Istanbul University Affiliated: No

Abstract

The purpose of the study is proposing a gate oxide degraded MOSFET model that represents the degraded MOSFET effects on Class-A power amplifier parameters. The model includes electrical stress induced threshold voltage and transconductance parameter instabilities of transistor. The change in threshold voltage is between 3.2 V and -1 V; the change in transconductance parameter is between 0.4A/V2 and 0.004A/V2. The circuit model is formed by using a voltage source at the gate terminal and a resistor at the source terminal of transistor. Simulations with the proposed model are performed and simulation results are compared experimental DC and AC measurements of Class-A amplifier with and without feedback resistor during stress. To improve the model, we also proposed a tuning circuit. Its seen that, the proposed model in the study is successful to simulate the stress induced change in gain, efficiency of Class-A power amplifier.