Detailed study on effects of gate voltage, frequency and temperature on dielectric properties of Cu/PAr/n-CdS/SnO2 MIS Schottky diode

KURUOĞLU F., ÇALIŞKAN M., YILDIRIM S., SERİN M.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.54, sa.14, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 54 Sayı: 14
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1088/1361-6463/abd80e
  • Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: dielectric spectroscopy, polymer films, hybrid junction, interface states, semiconductor thin films, ELECTRICAL-PROPERTIES, CONDUCTIVITY, OXIDE
  • İstanbul Üniversitesi Adresli: Evet

Özet

In this paper, CdS based metal-insulator-semiconductor (MIS) diode was fabricated by using the Polyarylate (PAr) film as insulator dielectric on transparent conductive glass substrate. The dielectric parameters such as dielectric constant (epsilon '), loss (epsilon), loss tangent (tan delta), ac conduc-tivity (sigma(AC)) and complex modulus (M '