Electrical Properties of Cr/p-type Si Schottky Diodes at room Temperature

Tatar B.

BALKAN PHYSICS LETTERS, no.24 th INTERNATIONAL PHYSICS CONGRESS, pp.448-450, 2008 (Peer-Reviewed Journal)

  • Publication Type: Article / Article
  • Publication Date: 2008
  • Page Numbers: pp.448-450
  • Istanbul University Affiliated: No


The conduction mechanism and electronic properties obtained from current-voltage characteristics (I-V) of Cr/p-Si Schottky barrier diode (SBD) at room temperature have been investigated. The Schottky barrier diode parameters such as zero-bias barrier height and ideality factor were determined using different method. The ideality factor (n), zero-bias barrier height (ĭB0) value at different method was found as 1.18-1.2 and 0.63-0.65 eV, respectively. Higher and lower electric fields are usually attributed various conduction mechanisms. The different conduction mechanism such as space charge limited conduction (SCLC), Schottky-type conduction and Poole-Frenkel conduction mechanism can be dominant in the studied.