Determination of Photovoltaic Properties for Nanostructures

Dag M., Akcay N. , KÖTEN H., Guner K.

JOURNAL OF ELECTRONIC MATERIALS, cilt.48, 2019 (SCI İndekslerine Giren Dergi) identifier identifier identifier

  • Cilt numarası: 48 Konu: 11
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1007/s11664-019-07380-7


Zinc sulfide (ZnS) and n-type zinc oxide (ZnO) nanostructures have been synthesized and deposited on p-type porous silicone to investigate their photovoltaic properties. The morphology of the synthesized structures has been investigated via scanning electron microscopy and it has been determined that the structures are in the nanoscale. Energy dispersive spectroscopy has been used to investigate the composition of the synthesized structures, and it has been determined that they have defects. The absorption measurements have been performed by ultraviolet-visible spectrophotometry. Based on these absorption measurements, the band gaps of the nanostructures have been calculated as 3.11 eV for spherical ZnO, 3.12 eV for flowers ZnO and 3.64 eV for ZnS. The nanostructures were deposited to obtain thin films in different thicknesses by using a spin-coating method on porous p-type silicone substrates, and then the photovoltaic and electrical properties were investigated. According to the obtained experimental results, it has been determined that the photovoltaic properties of the sample depend on the film thickness. Consequently, ZnS and n-type ZnO nanostructures have been synthesized by a sol-gel method and it has been found that they have photovoltaic properties.