We have developed a model for the rapid calculation of interband transitions in dilute nitride quantum well structures. The model assumes parabolic bands with the conduction band modified using the band anticrossing approach. The model is compared to results from k . p models, which while being more accurate and flexible than our model, require extensive computational time. The model predictions are compared to photoluminescence and photomodulated reflectance measurements of interband transitions in a number of GaNAs quantum well samples. (C) 2002 Elsevier Science B.V. All rights reserved.