Grounded inductance simulator realization with single VDDDA


Konal M., KAÇAR F.

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, vol.110, no.2, pp.279-288, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 110 Issue: 2
  • Publication Date: 2022
  • Doi Number: 10.1007/s10470-021-01957-1
  • Journal Name: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, DIALNET, Civil Engineering Abstracts
  • Page Numbers: pp.279-288
  • Keywords: Voltage differencing differential difference amplifier, VDDDA, Inductance simulator, Active filters, ACTIVE INDUCTOR, MINIMUM NUMBER, FILTER
  • Istanbul University Affiliated: Yes

Abstract

In this paper, a grounded inductance simulator circuit employing single voltage differencing differential difference amplifier (VDDDA) and a grounded capacitor is proposed. The purpose of this paper is to present an inductance simulator using minimum number of active and passive components. Due to the use of grounded capacitor in the proposed inductance simulator, the circuit is suitable for analog integrated circuit implementations. The circuit does not require any conditions of component matching. Furthermore, the presented circuit has electronically tunability property through changing the biasing current of the VDDDA. Inductance value of the circuit is analyzed for different biasing current values and at various temperatures. Additionally, in order to analyze the performance of the inductance simulator circuit, it is used in a second-order multifunction filter and third-order high pass filter structures. Noise voltage, frequency response, time domain response and total harmonic distortion analyzes are simulated for the filters. The simulation results of the proposed inductance simulator and filter circuits are verified and demonstrated with LTSPICE by using 0.18 mu m TSMC CMOS process parameters.