Muonium states and dynamics in 4H and 6H silicon carbide

Bani-Salameh H. N., ÇELEBİ Y. G., Chow K. H., Coss B., Cox S., Lichti R.

PHYSICA B-CONDENSED MATTER, vol.374, pp.368-371, 2006 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 374
  • Publication Date: 2006
  • Doi Number: 10.1016/j.physb.2005.11.103
  • Journal Name: PHYSICA B-CONDENSED MATTER
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.368-371
  • Istanbul University Affiliated: Yes

Abstract

Two isotropic Mu(0) centers are found in 4H Silicon Carbide (SiC) and a total of four Mu(0) states are seen in the 6H-SiC polytype. We report the temperature dependence of hyperfine constants, signal amplitudes, and relaxation rates for three Mu(0) centers in p-type 6H-SiC from spin precession data at 6T. Low-field results for the diamagnetic fraction imply two ionization steps with energies of 0.21 and 0.88 eV. Additional dynamics seen in several different SiC samples are discussed; however, specific assignments of site or charge-state transitions are not yet certain. (c) 2005 Elsevier B.V. All rights reserved.