10(6) years extrapolated hole storage time in GaSb/AlAs quantum dots

Marent A., Geller M., Schliwa A., Feise D., Poetschke K., Bimberg D., ...More

APPLIED PHYSICS LETTERS, vol.91, no.24, 2007 (SCI-Expanded, Scopus)

  • Publication Type: Article / Article
  • Volume: 91 Issue: 24
  • Publication Date: 2007
  • Doi Number: 10.1063/1.2824884
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Istanbul University Affiliated: Yes

Abstract

A thermal activation energy of 710 meV for hole emission from InAs/GaAs quantum dots (QDs) across an Al0.9Ga0.1As barrier is determined by using time-resolved capacitance spectroscopy. A hole storage time of 1.6 s at room temperature is directly measured, being three orders of magnitude longer than a typical dynamic random access memory (DRAM) refresh time. The dependence of the hole storage time in different III–V QDs on their localization energy is determined and the localization energies in GaSb-based QDs are calculated using eight-band k⋅p theory. A storage time of about 106 years inGaSb/AlAs QDs is extrapolated, sufficient for a QD-based nonvolatile (flash) memory.

A thermal activation energy of 710 meV for hole emission from InAs/GaAs quantum dots (QDs) across an Al(0.9)Ga(0.1)As barrier is determined by using time-resolved capacitance spectroscopy. A hole storage time of 1.6 s at room temperature is directly measured, being three orders of magnitude longer than a typical dynamic random access memory (DRAM) refresh time. The dependence of the hole storage time in different III-V QDs on their localization energy is determined and the localization energies in GaSb-based QDs are calculated using eight-band k center dot p theory. A storage time of about 106 years in GaSb/AlAs QDs is extrapolated, sufficient for a QD-based nonvolatile (flash) memory. (c) 2007 American Institute of Physics.