Muonium acceptor states in high GeSi1-xGex alloys

Carroll B. R., Lichti R. L., King P. J. C., Celebi Y. G., Yonenaga I., Chow K. H.

PHYSICA B-CONDENSED MATTER, cilt.404, ss.812-815, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 404
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.physb.2008.11.165
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.812-815
  • İstanbul Üniversitesi Adresli: Evet

Özet

Muon spin rotation and resonance studies of Czochralski-grown silicon germanium alloys with high Ge content have determined muonium (Mu) donor and acceptor energy levels. High-TF and RF mu SR measurements on 90% and 84% Ge content SiGe alloys show Mu acceptor energy levels of 13.5 +/- 5.2 and 77 +/- 12 meV, respectively, as well as a split tetrahedral Mu hyperfine signal. in addition to observing two Mu(T) states in these samples, we see in Si0.16Ge0.84 a possible shallow acceptor signal in our transverse field data as a time-delayed process most likely arising from neutral Mu states. Our fits obtain a relaxing diamagnetic signal that shows bond-centered Mu ionization above 150 K and a shallow signal below roughly 50 K, split +/- 80 kHz from diamagnetic Mu. Published by Elsevier B.V.