Muonium acceptor states in high GeSi1-xGex alloys
PHYSICA B-CONDENSED MATTER, vol.404, pp.812-815, 2009 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 404
- Publication Date: 2009
- Doi Number: 10.1016/j.physb.2008.11.165
- Journal Name: PHYSICA B-CONDENSED MATTER
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.812-815
- Istanbul University Affiliated: Yes
Abstract
Muon spin rotation and resonance studies of Czochralski-grown silicon germanium alloys with high Ge content have determined muonium (Mu) donor and acceptor energy levels. High-TF and RF mu SR measurements on 90% and 84% Ge content SiGe alloys show Mu acceptor energy levels of 13.5 +/- 5.2 and 77 +/- 12 meV, respectively, as well as a split tetrahedral Mu hyperfine signal. in addition to observing two Mu(T) states in these samples, we see in Si0.16Ge0.84 a possible shallow acceptor signal in our transverse field data as a time-delayed process most likely arising from neutral Mu states. Our fits obtain a relaxing diamagnetic signal that shows bond-centered Mu ionization above 150 K and a shallow signal below roughly 50 K, split +/- 80 kHz from diamagnetic Mu. Published by Elsevier B.V.