Muonium acceptor states in high GeSi1-xGex alloys


Carroll B. R. , Lichti R. L. , King P. J. C. , Celebi Y. G. , Yonenaga I., Chow K. H.

PHYSICA B-CONDENSED MATTER, vol.404, pp.812-815, 2009 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 404
  • Publication Date: 2009
  • Doi Number: 10.1016/j.physb.2008.11.165
  • Title of Journal : PHYSICA B-CONDENSED MATTER
  • Page Numbers: pp.812-815

Abstract

Muon spin rotation and resonance studies of Czochralski-grown silicon germanium alloys with high Ge content have determined muonium (Mu) donor and acceptor energy levels. High-TF and RF mu SR measurements on 90% and 84% Ge content SiGe alloys show Mu acceptor energy levels of 13.5 +/- 5.2 and 77 +/- 12 meV, respectively, as well as a split tetrahedral Mu hyperfine signal. in addition to observing two Mu(T) states in these samples, we see in Si0.16Ge0.84 a possible shallow acceptor signal in our transverse field data as a time-delayed process most likely arising from neutral Mu states. Our fits obtain a relaxing diamagnetic signal that shows bond-centered Mu ionization above 150 K and a shallow signal below roughly 50 K, split +/- 80 kHz from diamagnetic Mu. Published by Elsevier B.V.