Universal Filter Design Using 45 nm FinFET Technology-Based Floating Current Source

SAĞLAM BEDİR N., KAÇAR F.

IETE JOURNAL OF RESEARCH, vol.69, no.5, pp.2964-2973, 2023 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 69 Issue: 5
  • Publication Date: 2023
  • Doi Number: 10.1080/03772063.2021.1908854
  • Journal Name: IETE JOURNAL OF RESEARCH
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Applied Science & Technology Source, Compendex, Computer & Applied Sciences, INSPEC
  • Page Numbers: pp.2964-2973
  • Keywords: FCS, Fin type field effect transistor, FinFET, Floating current source, Nanotechnology
  • Istanbul University Affiliated: No

Abstract

Fin type Field Effect Transistor (FinFET) technology is a promising technology for single-digit nanometric dimensions. FinFETs are used to increase the performance by reducing the power consumption as the two gate voltages are controlled dependent and/or independently. This work explores the design of a Floating Current Source (FCS) using Double Gate (DG) FinFET and its application of a universal filter. The designed FinFET based FCS operates at 0.15 V power supply, the power consumption of the circuit is 51nW and bandwidth is approximately 100 MHz. The proposed FCS based filter circuit is simulated in LTspice with the FinFET 45 nm PTM-MG model. The filter topology behavior has been tested with an experimental study using the LM13700 integrated circuit and the experimental results are demonstrated. The proposed FinFET based circuit and its application can be used for the design of systems that require low power consumption and low chip area.