Stability of spin droplets in realistic quantum Hall devices

Atci, H.; Erkarslan, U.; Siddiki, Afif; Rasanen, E.

doi:10.1088/0953-8984/25/15/155604

Stability of spin droplets in realistic quantum Hall devices

Atıf İçin Kopyala

Atci H., Erkarslan U., Siddiki A., Rasanen E.

JOURNAL OF PHYSICS-CONDENSED MATTER, cilt.25, sa.15, 2013 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 25 Sayı: 15
Basım Tarihi: 2013
Doi Numarası: 10.1088/0953-8984/25/15/155604
Dergi Adı: JOURNAL OF PHYSICS-CONDENSED MATTER
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
İstanbul Üniversitesi Adresli: Evet

Özet

We study the formation and characteristics of 'spin droplets', i.e. compact spin-polarized configurations in the highest occupied Landau level, in an etched quantum Hall device at filling factors 2 <= nu <= 3. The confining potential for electrons is obtained with self-consistent electrostatic calculations on a GaAs/AlGaAs heterostructure with experimental system parameters. Real-space spin-density-functional calculations for electrons confined in the obtained potential show the appearance of stable spin droplets at nu similar to 5/2. The qualitative features of the spin droplet are similar to those in idealized (parabolic) quantum-dot systems. The universal stability of the state against geometric deformations underlines the applicability of spin droplets in, for example, spin-transport through quantum point contacts.