Screening model of metallic nonideal contacts in the integer quantized Hall regime

Eksi D., Kilicoglu O., Goektas O., Siddiki A.

PHYSICAL REVIEW B, vol.82, no.16, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 82 Issue: 16
  • Publication Date: 2010
  • Doi Number: 10.1103/physrevb.82.165308
  • Journal Name: PHYSICAL REVIEW B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Istanbul University Affiliated: Yes


In this work, we calculate the electron and the current-density distributions both at the edges and the bulk of a two-dimensional electron system, focusing on ideal and nonideal contacts. A three-dimensional Poisson equation is solved self-consistently to obtain the potential profile in the absence of an external magnetic field considering a Hall bar defined both by gates (contacts) and etching (lateral confinement). In the presence of a perpendicular magnetic field, we obtain the spatial distribution of the incompressible strips, taking into account the electron-electron interactions within the Thomas-Fermi approximation. Using a local version of Ohm's law, together with a relevant conductivity model, we also calculate the current distribution. We observe that the incompressible strips can reside either on the edge or at the bulk depending on the field strength. Our numerical results show that, due to a density poor region just in front of the contacts, the incompressible strips are not in direct contact with the injection region when considering nonideal contact configuration. Such a nonideal contact is in strong contrast with the conventional edge channel pictures, hence has a strong influence on transport. We also take into account heating effects in a phenomenological manner and propose a current injection mechanism from the compressible regions to the incompressible regions. The model presented here perfectly agrees with the local probe experiments all together with the formation of hot-spots.