A new time-dependent mobility degradation model for MOS transistors
MICROELECTRONICS INTERNATIONAL, vol.29, no.3, pp.141-144, 2012 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 29 Issue: 3
- Publication Date: 2012
- Doi Number: 10.1108/13565361211252890
- Journal Name: MICROELECTRONICS INTERNATIONAL
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.141-144
- Istanbul University Affiliated: Yes
Abstract
Purpose - The purpose of this paper is to propose a time-dependent mobility degradation model which is independent from the process or operating conditions.