A new time-dependent mobility degradation model for MOS transistors

Ozcelep Y., Kuntman A.

MICROELECTRONICS INTERNATIONAL, vol.29, no.3, pp.141-144, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 29 Issue: 3
  • Publication Date: 2012
  • Doi Number: 10.1108/13565361211252890
  • Journal Name: MICROELECTRONICS INTERNATIONAL
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.141-144
  • Istanbul University Affiliated: Yes

Abstract

Purpose - The purpose of this paper is to propose a time-dependent mobility degradation model which is independent from the process or operating conditions.