A new time-dependent mobility degradation model for MOS transistors

Ozcelep Y., Kuntman A.

MICROELECTRONICS INTERNATIONAL, cilt.29, sa.3, ss.141-144, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 29 Sayı: 3
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1108/13565361211252890
  • Dergi Adı: MICROELECTRONICS INTERNATIONAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.141-144
  • İstanbul Üniversitesi Adresli: Evet

Özet

Purpose - The purpose of this paper is to propose a time-dependent mobility degradation model which is independent from the process or operating conditions.