INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS


DELLORTO T., ALMEIDA J., COLUZZA C., BALDERESCHI A., MARGARITONDO G., CANTILE M., ...More

APPLIED PHYSICS LETTERS, vol.64, no.16, pp.2111-2113, 1994 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 64 Issue: 16
  • Publication Date: 1994
  • Doi Number: 10.1063/1.111699
  • Title of Journal : APPLIED PHYSICS LETTERS
  • Page Numbers: pp.2111-2113

Abstract

Internal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs subtrate.