INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS


DELLORTO T., ALMEIDA J., COLUZZA C., BALDERESCHI A., MARGARITONDO G., CANTILE M., ...Daha Fazla

APPLIED PHYSICS LETTERS, cilt.64, ss.2111-2113, 1994 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 64 Konu: 16
  • Basım Tarihi: 1994
  • Doi Numarası: 10.1063/1.111699
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Sayfa Sayıları: ss.2111-2113

Özet

Internal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs subtrate.