Akademik Veri Yönetim Sistemi
Applied Physics A: Materials Science and Processing, cilt.130, sa.7, 2024 (SCI-Expanded)
The temperature-dependent transport properties of n-type InGaAsBi epitaxial alloys with various doping densities are investigated by conducting magnetoresistance (MR) and Hall Effect (HE) measurements. The electronic band structure of the alloys and free electron distribution were calculated using Finite Element Method (FEM). Analysis of the oscillations in the transverse (Hall) resistivity shows that quasi-two-dimensional electron gas (Q-2D) in the bulk InGaAsBi epitaxial layer (three-dimensional, 3D) forms at the sample surface under magnetic field even though there is no formation of the spacial two-dimensional electron gas (2DEG) at the interface between InGaAs and InP:Fe interlayer. The formation of Q-2D in the 3D epitaxial layer was verified by temperature and magnetic field dependence of the resistivity and carrier concentration. Analysis of Shubnikov-de Haas (SdH) oscillations in longitudinal (sample) resistivity reveals that the electron effective mass in InGaAsBi alloys are not affect by Bi incorporation into host InGaAs alloys, which verifies the validity of the Valence Band Anti-Crossing (VBAC) model. The Hall mobility of the nondegenerate samples shows the conventional 3D characteristics while that of the samples is independence of temperature for degenerated samples. The scattering mechanism of the electrons at low temperature is in long-range interaction regime. In addition, the effects of electron density on the transport parameters such as the effective mass, and Fermi level are elucidated considering bandgap nonparabolicity and VBAC interaction in InGaAsBi alloys.