Alternative Conductivity of TlSe Thin Film

Ulutas K.

JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, cilt.21, sa.3, ss.753-757, 2018 (ESCI İndekslerine Giren Dergi) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 21 Konu: 3
  • Basım Tarihi: 2018
  • Doi Numarası: 10.2339/politeknik.417769
  • Sayfa Sayıları: ss.753-757


Capacitance (C) and dielectric loss factor (tan d) of TlSe thin film with thickness of 900 A, measured via thermal evaporation of TlSe crystals, have been measured using ohmic Al electrodes. Dielectric constant (e'), dielectric loss (er''), reel part and imaginary part of dielectric modulus and ac conducticity of the TlSe thin films have been calculated in the frequency range 100 Hz- 106 Hz and within the temperature interval 213- 393 K. Relaxation times in structure were derived by using Cole- Cole relation. The dielectric parameters of TlSe thin film are found to decrease with increasing frequency and increase with increasing temperature. This behavior can be explained as the multicomponent polarization in the structure. The ac conductivity obeys the.s law with s (s< 1). Two different conductivity mechanisms were determined in the structure. These are small polaron tunnels of the mechanism at low frequencies and classic hopping mechanism at high frequencies.