Gain-bandwidth limitations of 0.18 mu m Si-CMOS RF technology

Yarman B. S. , Retdian N., Takagi S., Fujii N.

18th European Conference on Circuit Theory Design, Sevilla, İspanya, 26 - 30 Ağustos 2007, ss.264-265 identifier identifier

  • Cilt numarası:
  • Doi Numarası: 10.1109/ecctd.2007.4529587
  • Basıldığı Şehir: Sevilla
  • Basıldığı Ülke: İspanya
  • Sayfa Sayıları: ss.264-265


In this paper., gain bandwidth limitations of' a regularly processed 0.18 mu m Si CMOS FET is investigated over the frequency hand of 450MHz-10GHz. It is exhibited that 0.18 mu m Si CMOS processing technology can safely he utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems; placed silicon chips up to X-Band.