Temperature Dependence Of The Threshold Electric Field In A Hot Electron Vcsel

EROL A., Balkan N., ARIKAN M. Ç., Serpengüzel A.

IET OPTOELECTRONICS, vol.150, pp.535-540, 2003 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 150
  • Publication Date: 2003
  • Journal Name: IET OPTOELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Business Source Elite, Business Source Premier, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.535-540
  • Istanbul University Affiliated: Yes

Abstract

 

The operation of the hot electron light emitting and lasing in semiconductor
heterostructure – vertical cavity surface emitting laser (HELLISH–VCSEL) devices is based on
hot carrier transport parallel to the layers of Ga1x
Alx
As p–n junction. It is therefore a ?eld-effect
device and the light emission from the device is independent of the polarity of the applied voltage.
The authors present a study of the temperature dependence of the operational characteristics of the
device. Experimental studies comprise the measurements of the I–V characteristics,
electroluminescence, re?ectivity, and temperature-dependent light-applied electric ?eld (L–F)
characteristics. To obtain the optimum operation temperature, the gain calculations, re?ectivity
spectra, and band gap calculations were carried out at different temperatures. The temperature
dependence of the threshold electric ?eld is compared with the model calculations, where radiative
transitions without momentum (k) selection are considered